Part Number Hot Search : 
LM723 P87LPC TG5011 20L45CT ELJSC680 ULN2804 945ETTS 93C46
Product Description
Full Text Search

CY7C1513JV18-250BZXC - 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165

CY7C1513JV18-250BZXC_4301064.PDF Datasheet

 
Part No. CY7C1513JV18-250BZXC
Description 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165

File Size 908.32K  /  24 Page  

Maker

Cypress Semiconductor, Corp.



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: CY7C1513JV18-250BZXC
Maker: Cypress Semiconductor Corp
Pack: ETC
Stock: Reserved
Unit price for :
    50: $0.00
  100: $0.00
1000: $0.00

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ CY7C1513JV18-250BZXC Datasheet PDF Downlaod from Datasheet.HK ]
[CY7C1513JV18-250BZXC Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for CY7C1513JV18-250BZXC ]

[ Price & Availability of CY7C1513JV18-250BZXC by FindChips.com ]

 Full text search : 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165


 Related Part Number
PART Description Maker
CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- 18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
Analog Devices, Inc.
CY7C1911BV18 (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
Cypress Semiconductor
UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
TOKO, Inc.
EPCOS AG
CY7C1315AV18-250BZC CY7C1311AV18 CY7C1311AV18-167B 18-Mb QDR(TM)-II SRAM 4-Word Burst Architecture
18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CYPRESS[Cypress Semiconductor]
CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- 72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
Atmel, Corp.
PD46184184BF1-E40-EQ1 PD46185084BF1-E40-EQ1 PD4618 18M-BIT DDR II SRAM 4-WORD BURST OPERATION
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
Renesas Electronics Corporation
CY7C1410JV18-267BZC CY7C1410JV18-267BZI CY7C1410JV 36-Mbit QDR垄芒-II SRAM 2-Word Burst Architecture
36-Mbit QDR?II SRAM 2-Word Burst Architecture
Cypress Semiconductor
CY7C1413BV18-300BZXC CY7C1413BV18-300BZXI CY7C1413 36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture
36-Mbit QDR??II SRAM 4-Word Burst Architecture
36-Mbit QDR?II SRAM 4-Word Burst Architecture
Cypress Semiconductor
CY7C1515V18-250BZC CY7C1526V18 CY7C1526V18-167BZC 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture
72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
72-Mbit QDR?II SRAM 4-Word Burst Architecture
CYPRESS[Cypress Semiconductor]
CY7C1412V18-200BZCES CY7C1414V18-200BZCES CY7C1410 36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mbit QDR-II™ SRAM 2-Word Burst Architecture
36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
Cypress Semiconductor
CY7C1429AV18 CY7C1422AV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构36-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构(2字突发结36 -兆位的DDR - II二氧化硅的SRAM
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构6-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构(2字突发结36 -兆位的DDR - II二氧化硅的SRAM
Cypress Semiconductor Corp.
CY7C1568KV18-550BZXC 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
 
 Related keyword From Full Text Search System
CY7C1513JV18-250BZXC Bit CY7C1513JV18-250BZXC pin CY7C1513JV18-250BZXC wire CY7C1513JV18-250BZXC dual CY7C1513JV18-250BZXC planar
CY7C1513JV18-250BZXC Amp CY7C1513JV18-250BZXC receiver CY7C1513JV18-250BZXC Bandwidth CY7C1513JV18-250BZXC max CY7C1513JV18-250BZXC lcd
 

 

Price & Availability of CY7C1513JV18-250BZXC

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.32225704193115